| PART |
Description |
Maker |
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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http://
Maxwell Technologies, Inc
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot
From old datasheet system
2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
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ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16）单2.7伏电池电压⑩闪存
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| 28LV010RPDB20 28LV010RPDB25 28LV010RT1DB20 28LV010 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM
|
Maxwell Technologies
|
| EN29F010 EN29F010-70JCP EN29F010-90JIP EN29F010-55 |
1 Megabit (128K x 8-bit) 5V Flash Memory
|
ETC
Eon Silicon Solution Inc.
|
| AM29F200AB-150EEB AM29F200AB-70FC AM29F200AB-90SEB |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
Dual Retriggerable Monostable Multivibrators 16-SSOP -40 to 85 128K X 16 FLASH 5V PROM, 120 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48
Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
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Advanced Micro Devices, Inc.
http://
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| AM29LV200B03 AM29LV200BT-60RDRC AM29LV200BT-60RDRI |
128K X 16 FLASH 3V PROM, 70 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
|
SPANSION LLC
AMD[Advanced Micro Devices]
http://
|
| AM29LV001BB-45RFI AM29LV001BB-45RFIB AM29LV001BB-4 |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位28亩8位）的CMOS 3.0伏，只引导扇区闪
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
64KX16,TSOP(II)44,IND,SRAM
|
http://
Advanced Micro Devices, Inc.
|
| AM29F100-1 AM29F100B-120DGC AM29F100B-120DGC1 AM29 |
1 megabit CMOS 5.0 volt-only, boot sector flash memory
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1
Hex Inverters 14-VQFN -40 to 85
1兆位28x 8-Bit/64x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC47
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 1兆位28亩x 8-Bit/64亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
Hex Inverters 14-TSSOP -40 to 85 1兆位28亩x 8-Bit/64亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
|
| AM29F100B-120DGC AM29F100B-120DGE AM29F100B-120DGC |
Hex Inverters With Open-Drain Outputs 14-SOIC -40 to 85
Quadruple 2-Input Positive-AND Gates 14-VQFN -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO48
Quadruple 2-Input Positive-AND Gates 14-SOIC -40 to 85 128K X 8 FLASH 5V PROM, 150 ns, PDSO48
Triple 3-Input Positive-AND Gates 14-SSOP -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO44
Triple 3-Input Positive-NAND Gate 14-SOIC -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO44
Triple 3-Input Positive-NAND Gate 14-SSOP -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO48
Quadruple 2-Input Positive-AND Gates 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 150 ns, PDSO44
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDSO48
Hex Inverters With Open-Drain Outputs 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 150 ns, PDSO48
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 8 FLASH 5V PROM, 150 ns, PDSO48
Hex Inverters With Open-Drain Outputs 14-SSOP -40 to 85 128K X 8 FLASH 5V PROM, 120 ns, PDSO48
Hex Inverter Buffers/Drivers With Open-Drain Outputs 14-TVSOP -40 to 85 128K X 8 FLASH 5V PROM, 150 ns, PDSO44
Hex Inverter Buffers/Drivers With Open-Drain Outputs 14-SO -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO48
Hex Inverter Buffers/Drivers With Open-Drain Outputs 14-SOIC -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO48
Replaced by SN74LV08A : Quadruple 2-Input Positive-AND Gate 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 120 ns, PDSO48
Hex Buffers/Drivers With Open-Drain Outputs 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO48
Hex Inverter Buffers/Drivers With Open-Drain Outputs 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO48
Hex Inverters With Open-Drain Outputs 14-TVSOP -40 to 85 128K X 8 FLASH 5V PROM, 120 ns, PDSO48
Hex Buffers/Drivers With Open-Drain Outputs 14-SSOP -40 to 85 128K X 8 FLASH 5V PROM, 70 ns, PDSO44
Triple 3-Input Positive-NAND Gate 14-SOIC -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO48
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PDSO44
Hex Inverters With Open-Drain Outputs 14-SO -40 to 85 128K X 8 FLASH 5V PROM, 120 ns, PDSO44
Triple 3-Input Positive-NAND Gate 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO48
Hex Buffers/Drivers With Open-Drain Outputs 14-SOIC -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO48
Hex Buffers/Drivers With Open-Drain Outputs 14-TSSOP -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO44
Hex Buffers/Drivers With Open-Drain Outputs 14-TVSOP -40 to 85 128K X 8 FLASH 5V PROM, 90 ns, PDSO48
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1
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http://
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
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